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We discuss the derivation of multimode rate equations for the descr iption of a semiconductor laser with
external cavity. We adopt a formulation where the complex field amplitudes are coupled to the nonlinear gains.
For N lasing modes, this leads t
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对10 GHz的分布反馈(DFB)半导体
激光器(LD)进行数值求解
-10 GHz for the distributed feedback (DFB) semiconductor laser diode (LD) for numerical solution
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an introduction of semiconductor laser
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大功率半导体激光器二元光学消像散准直器件设计-High power semiconductor laser astigmatism binary optical collimating device design
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a Matlab code to simulate the semiconductor laser
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vertical-cavity surface-emitting laser (semiconductor laser device, diode laser)
Telecomunications, Pumping source
Wave length : infrared to visible
etched mesa VCSEL 980nm
Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm
Material:
ALG
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Simultaneous all-optical regeneration and wavelength
conversion is demonstrated at 2.488 Gb/s for the first time
in an integrated distributed feedback laser/semiconductor optical
amplifier. After 93 km of standard fiber, a negative sensitivity
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